publication date : apr., 2011 1 < low noise gaas hemt > mgf4953a leadless ceramic package description the mgf4953a super-low noise ingaas hemt (high electron mobility transistor) is designed for use in c to k band amplifiers. the lead-less ceramic package assures minimum parasitic losses. features low noise figure @ f=12ghz nfmin. = 0.35db (typ.) high associated gain @ f=12ghz gs = 13.5db (typ.) application c to k band low noise amplifiers quality grade gg recommended bias conditions v ds =2v , i d =10ma ordering information tape & reel 10,000pcs/reel rohs compliant mgf4953a is a rohs compliant product. rohs compliance is indicated by the letter ?g? after the lot marking. absolute maximum ratings (ta=25 ? c ) symbol parameter ratings unit v gdo gate to drain voltage -3 v v gso gate to source voltage -3 v i d drain current 60 ma pt total power dissipation 50 mw t ch channel temperature 125 ? c t stg storage temperature -55 to +125 ? c electrical characteristics (ta=25 ? c ) symbol parameter test conditions limits unit min. typ. max v (br)gdo gate to drain breakdown voltage i g =-10 ? a -3 -- -- v i gss gate to source leakage current v gs =-2v,v ds =0v -- -- 50 ? a i dss saturated drain current v gs =0v,v ds =2v 15 -- 60 ma v gs(off) gate to source cut-off voltage v ds =2v,i d =500 ? a -0.1 -- -1.5 v gs associated gain v ds =2v, 12.0 13.5 -- db nfmin. minimum noise figure i d =7.5ma,f=12ghz -- 0.35 0.50 db note: gs and nfmin. are tested with sampling inspection. outline drawing fig.1 mitsubishi proprietary not to be reproduced or disclosed without permission by mitsubishi electric
< low noise gaas hemt > mgf4953a leadless ceramic package publication date : apr., 2011 2 fig.1 unit: mm gate source drain top side bottom ? ? 0.200.1 0.800.1 from "a" side view (2.30) (0.30) +0.20 -0.10 2.15 + 0 . 2 0 - 0 . 1 0 2 . 1 5 a 2 - 0 . 5 0 0 . 0 5 1 . 2 0 0 . 0 5 2-r0.275 2-r0.20 2 - ( 1 . 0 2 ) 4 - 0 . 5 5 0 . 0 5 2 - ( 2 . 2 0 ) ? ? square shape electrode is drain ? ? ? ?
< low noise gaas hemt > mgf4953a leadless ceramic package publication date : apr., 2011 3 typical characteristics (ta=25c) i d vs. v ds i d vs. v gs nf & gs vs. i d (v ds =2v) (v gs =~0.1v/step) (f=12ghz, v ds =2v) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 15 20 () ta=25 v ds =2v f=12ghz nf gs 0 10 20 30 40 0123 0 10 20 30 40 -1 -0.5 0 drain to source voltage v ds (v) gate to source voltage v gs (v) drain current i d ( ma )
< low noise gaas hemt > mgf4953a leadless ceramic package publication date : apr., 2011 4 s parameters (vds=2v,id=10ma, ta=25 ? c) noise parameters (vds=2v, id=10ma, ta=25 ? c) measurement plane (2.2mm) board; ro4003c (rogers corp.) ? r=3.38, t=0.508mm, au (cu) =0.035mm freq. (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 1 0.989 -4.0 5.212 166.6 0.038 82.4 0.689 -10.7 2 0.968 -20.4 5.101 152.0 0.046 72.4 0.669 -21.1 3 0.942 -36.8 4.989 137.3 0.054 62.4 0.640 -31.5 4 0.927 -53.2 4.877 122.7 0.062 52.4 0.604 -41.9 5 0.857 -69.5 4.766 108.0 0.070 42.4 0.554 -52.4 6 0.787 -85.8 4.655 93.4 0.078 32.4 0.505 -62.7 7 0.716 -101.5 4.524 79.3 0.085 23.5 0.454 -72.7 8 0.654 -119.2 4.378 64.9 0.093 13.5 0.399 -84.1 9 0.582 -135.3 4.162 52.0 0.095 4.9 0.341 -93.6 10 0.525 -152.8 4.008 39.5 0.095 -2.5 0.288 -102.8 11 0.494 -170.2 3.887 27.3 0.096 -8.4 0.250 -113.0 12 0.474 171.2 3.761 15.2 0.096 -14.2 0.212 -124.7 13 0.471 152.0 3.656 2.9 0.097 -20.6 0.180 -140.4 14 0.484 134.6 3.593 -9.4 0.096 -26.0 0.159 -156.4 15 0.501 118.4 3.522 -21.9 0.095 -33.2 0.155 -175.5 16 0.544 101.2 3.335 -36.1 0.098 -37.5 0.163 153.3 17 0.579 86.8 3.209 -49.3 0.099 -42.9 0.182 132.4 18 0.612 73.6 3.038 -62.7 0.101 -49.3 0.216 110.1 19 0.646 62.0 2.814 -73.7 0.102 -56.2 0.260 90.7 20 0.688 50.3 2.726 -85.1 0.107 -63.9 0.301 76.3 21 0.733 39.4 2.613 -96.7 0.112 -75.1 0.340 59.0 22 0.765 28.6 2.499 -108.3 0.115 -86.3 0.370 48.0 23 0.798 17.7 2.384 -120.0 0.119 -97.5 0.405 37.0 24 0.831 6.9 2.269 -131.6 0.123 -108.7 0.444 30.2 25 0.831 -3.9 2.152 -143.2 0.127 -119.9 0.483 23.1 26 0.814 -14.7 2.034 -154.8 0.131 -131.1 0.522 17.1 s22 s11 s21 s12 freq. nfmin rn (ghz) (db) (mag) (ang) ? ? note: we are ready to provide nonlinear model for ads and mwo users. if you are interested, please contact our sales offices.
< low noise gaas hemt > mgf4953a leadless ceramic package publication date : apr., 2011 5 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! ? mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibilit y that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire ore property damage. remember to give due consideration to safety when making your circuit design s, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non -flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assi st our customers in the se lection of the mitsubishi semiconductor product best suited to the customer?s application; they do not c onvey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electric corporation or a third party. ? mitsubishi electric corporation as sumes no responsibility for any damage, or infringement of any third- party?s rights, originating in the use of any product dat a, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, in cluding product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mi tsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the la test product information before purchasing a product listed herein. the information described here may contain tech nical in accuracies or typographical errors. mitsubishi electric corporation assume s no responsibility for any damage, li ability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http://www.mitsubi shielectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the inform ation and products. mitsubishi electric corporation assumes no responsibility fo r any damage, liability or other loss resulting from the information contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circum stances in which human life is potent ially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, ae rospace, nuclear, or undersea repeater use. ? the prior written approval of mitsubishi electric corpor ation is necessary to reprint or reproduce in whole ore in part these materials. ? if these products or technologies are subject to th e japanese export control restrictions, they must be exported under a license from the japanese governm ent and cannot be imported into a country other than the approved destination. any diversion or re-export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these ma terials or the products contained therein.
|
